| PART |
Description |
Maker |
| K4S640832D K4S640832D-TC_L10 K4S640832D-TC_L1H K4S |
64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| KM416S4030C KM416S4030CT-F10 KM416S4030CT-F7 KM416 |
64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 125MHz
1M x 16Bit x 4 Banks Synchronous DRAM 100万16 × 4银行同步DRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K4S641632D K4S641632D-TC_L1H K4S641632D-TC_L1L K4S |
64Mbit SDRAM 1M x 16Bit x 4 Banks Synchronous DRAM LVTTL
Advanced LinCMOS(TM) Low-Noise Precision Operational Amplifier 8-SOIC
|
Samsung Electronic
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HY57V281620FTP |
Synchronous DRAM Memory 128Mbit (8Mx16bit)
|
Hynix Semiconductor
|
| AS4SD4M16DG-10/IT AS4SD4M16DG-10/XT AS4SD4M16DG-8/ |
4 Meg x 16 SDRAM Synchronous DRAM Memory
|
Austin Semiconductor
|
| AS4SD16M16DG-75_XT AS4SD16M16 AS4SD16M16DG-75 AS4S |
256 MB: 16 Meg x 16 SDRAM Synchronous DRAM Memory
|
AUSTIN[Austin Semiconductor]
|
| M74DW66500B |
2x 64Mbit Flash Memory and 32Mbit Pseudo SRAM
|
ST Microelectronics
|
| LHF64P01 LH28F640SP LH28F640SPHT-PTL12 |
64Mbit (4Mbitx16/8Mbitx8) Page Flash Memory
|
Sharp Electrionic Compo...
Sharp Corporation
|
| W28F641B |
64MBIT (4MBIT 16) PAGE MODE DUAL WORK FLASH MEMORY
|
Winbond Electronics Corp
|
| M29KW064E90N1 |
64MBIT (4MBX16, UNIFORM BLOCK) 3V SUPPLY LIGHTFLASH™ MEMORY
|
ST Microelectronics
|
| HY57V28162 HY57V281620A HY57V281620ALT-HI HY57V281 |
4 Banks x 2M x 16bits Synchronous DRAM 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
8Mx16|3.3V|4K|K|SDR SDRAM - 128M
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
|
| MT48LC8M16LFTG-75ITG MT48LC8M16LFF4-75ITG MT48LC4M |
8M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54 8 X 8 MM, VFBGA-54
4M X 32 SYNCHRONOUS DRAM, 7 ns, PBGA90 8 X 13 MM, VFBGA-90
8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Qimonda AG
SMSC, Corp.
|
